/*
*********************************************************************************************************
*
* 模块名称 : ds2782驱动
* 文件名称 : DS2782.c
* 版 本 : V1.0
* 说 明 :
*
* 修改记录 :
* 版本号 日期 作者 说明
* V1.0 2019-02-022 Baiyang
*
*
*********************************************************************************************************
*/
#include "string.h"
#include "math.h"
#include <stdio.h>
#include <stdlib.h>
#include "gsdk_api.h"
#include "bsp_ds2782.h"
#include "gsdk_sdk.h"
static gsdk_handle_t g_hi2c;
/*
* 函数名 Write_DS2782_Shadow_RAM
* 功能 写DS2782影子寄存器
*/
void Write_DS2782_Shadow_RAM(uint8_t reg_Addres,uint8_t data)
{
int ret;
uint8_t data_reg_addr[] = {0x00, 0x00};
data_reg_addr[0] = reg_Addres;
data_reg_addr[1] = data;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[1], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error1 (%ld)\n", ret);
OEM_LOGE("I2C Transmit error2 (%d)\n", ret);
}
}
/*
* 函数名 Copy_Data_For_Shadow_RAM_To_EEPROM
* 功能 将影子寄存器数据Copy至EEPROM
* 详见数据手册 P26页 Function Command Protocol 章节
*/
void Copy_Data_For_Shadow_RAM_To_EEPROM(uint8_t EEPROM_BLOCK)
{
int ret;
uint8_t data_reg_addr[] = {0x00, 0x00};
data_reg_addr[0] = FCR;
data_reg_addr[1] = EEPROM_BLOCK;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[1], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error3 (%ld)\n", ret);
OEM_LOGE("I2C Transmit error4 (%d)\n", ret);
}
}
/*
* 函数名 Get_DS2782_STATUS
* 功能 度状态寄存器
*/
uint8_t Get_DS2782_STATUS()
{
uint8_t data;
int ret;
uint8_t data_reg_addr[2];
int timeout_ms = 5000;
data_reg_addr[0] = STATUS;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address|I2C_WR, data_reg_addr, 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address|I2C_RD, &data, 1, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
return data;
}
/*
* 函数名 Get_DS2782_Temperature
* 红能 获取DS2782温度 放大十倍
*/
uint16_t Get_DS2782_Temperature()
{
uint8_t data[2];
uint16_t Temperature=0;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = TEMPMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error5 (%ld)\n", ret);
OEM_LOGE("I2C Transmit error6 (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error7 (%ld)\n", ret);
OEM_LOGE("I2C Read error8 (%d)\n", ret);
return -1;
}
Temperature+=data[0]<<3;
Temperature+=data[1]>>5;
Temperature*=0.125;
return Temperature;
}
/*
* 函数名 Get_DS2782_Voltage
* 红能 获取DS2782电压
*/
uint16_t Get_DS2782_Voltage()
{
uint8_t data[2];
uint16_t Voltage=0;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = VOLTMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
Voltage+=data[0]<<3;
Voltage+=data[1]>>5;
Voltage*=4.88;
Voltage*=2;
return Voltage;
}
/*
* 函数名 Get_DS2782_Current
* 功能 获取DS2782电流
*/
int16_t Get_DS2782_Current()
{
uint8_t data[2];
int16_t Current=0;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = CURRENTMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
Current+=data[0]<<8;
Current+=data[1];
Current=(int)(Current*1.5625/RSNSP_mOhm); //mA
return Current;
}
/*
* 函数名 Get_DS2782_RAAC
* 功能 剩余绝对有效电量 (RAAC) [mAh]
*/
uint16_t Get_DS2782_RAAC()
{
uint8_t data[2];
uint16_t Remaining_Capacity=0;
int ret;
uint8_t data_reg_addr[] = {0x00};
int timeout_ms = 5000;
data_reg_addr[0] = RAACMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
Remaining_Capacity+=data[0]<<8;
Remaining_Capacity+=data[1];
return Remaining_Capacity;
}
/*
* 函数名 Get_DS2782_RSAC
* 功能 剩余绝对待机电量 (RSAC) [mAh]
*/
uint16_t Get_DS2782_RSAC()
{
uint8_t data[2];
uint16_t Remaining_Capacity=0;
int ret;
uint8_t data_reg_addr[] = {0x00};
int timeout_ms = 5000;
data_reg_addr[0] = RSACMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
Remaining_Capacity+=data[0]<<8;
Remaining_Capacity+=data[1];
return Remaining_Capacity;
}
/*
* 函数名 Get_DS2782_RARC
* 功能 剩余相对对有效电量 (RARC) [%]
*/
uint8_t Get_DS2782_RARC()
{
uint8_t data;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = RARC;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, &data, 1, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
return data;
}
/*
* 函数名 Get_DS2782_RSRC
* 功能 剩余相对待机电量 (RSRC) [%]
*/
uint8_t Get_DS2782_RSRC()
{
uint8_t data;
int ret;
uint8_t data_reg_addr[] = {0x00};
int timeout_ms = 5000;
data_reg_addr[0] = RSRC;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, &data, 1, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
return data;
}
/*
* 函数名 Get_DS2782_ACR
* 功能 . 累计电流 (ACRMSB) [6.25μVh/RSNS]
*/
uint16_t Get_DS2782_ACR()
{
uint8_t data[2];
uint16_t ACR=0;
int ret;
uint8_t data_reg_addr[] = {0x00};
int timeout_ms = 5000;
data_reg_addr[0] = ACRMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error (%ld)\n", ret);
OEM_LOGE("I2C Transmit error (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error (%ld)\n", ret);
OEM_LOGE("I2C Read error (%d)\n", ret);
return -1;
}
ACR+=data[0]<<8;
ACR+=data[1];
ACR=(int)(ACR*0.625);
return ACR;
}
/*
* 函数名 Get_DS2782_FULL(T)
* 红能 获取DS2782当前温度下满电量
*/
uint16_t Get_DS2782_FULL()
{
uint8_t data[2];
uint16_t full=0;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = FULLMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error5 (%ld)\n", ret);
OEM_LOGE("I2C Transmit error6 (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error7 (%ld)\n", ret);
OEM_LOGE("I2C Read error8 (%d)\n", ret);
return -1;
}
full+=data[0]<<8;
full+=data[1];
return full;
}
/*
* 函数名 Get_DS2782_AE(T)
* 红能 获取DS2782当前温度下满电量
*/
uint16_t Get_DS2782_AE()
{
uint8_t data[2];
uint16_t AE=0;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = AEMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error5 (%ld)\n", ret);
OEM_LOGE("I2C Transmit error6 (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error7 (%ld)\n", ret);
OEM_LOGE("I2C Read error8 (%d)\n", ret);
return -1;
}
AE+=data[0]<<8;
AE+=data[1];
return AE;
}
/*
* 函数名 Get_DS2782_SE(T)
* 红能 获取DS2782当前温度下满电量
*/
uint16_t Get_DS2782_SE()
{
uint8_t data[2];
uint16_t SE=0;
int ret;
int timeout_ms = 5000;
uint8_t data_reg_addr[] = {0x00};
data_reg_addr[0] = AEMSB;
ret = gsdk_i2c_write(g_hi2c, DS2782_8bit_Slave_Address, &data_reg_addr[0], 1);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Transmit error5 (%ld)\n", ret);
OEM_LOGE("I2C Transmit error6 (%d)\n", ret);
return -1;
}
ret = gsdk_i2c_read(g_hi2c, DS2782_8bit_Slave_Address, data, 2, timeout_ms);
if (ret != GSDK_SUCCESS)
{
gsdk_syslog_printf("I2C Read error7 (%ld)\n", ret);
OEM_LOGE("I2C Read error8 (%d)\n", ret);
return -1;
}
SE+=data[0]<<8;
SE+=data[1];
return SE;
}
void bsp_Init_DS2782()
{
gsdk_status_t status;
//初始化I2C总线
status = gsdk_i2c_master_init(I2C_MASTER_2, I2C_FREQUENCY_400K, &g_hi2c);//welinkopen only support i2c master 2 or i2c master 1
if (status != GSDK_SUCCESS)
{
gsdk_syslog_printf("[PRINTF_DEMO]: failed to open i2c %d\n", status);
}
else
{
printf("****************************i2c open success*********************************\n");
}
}
void Module_DS2781_Set_Register(void)
{
uint8_t TEMP[2];
uint16_t TEMP_Word;
/* 配置 Parameter EEPROM Memory Block 1 的 shadow RAM （影子寄存器） */
Write_DS2782_Shadow_RAM(CONTROL,0x00); //控制寄存器
Write_DS2782_Shadow_RAM(AB,0x00); //累计偏置
TEMP_Word=(uint16_t)Capacity*RSNSP_mOhm; //计算 老化容量 AC 单位 6.25μVh
TEMP_Word=(int)(TEMP_Word/6.25);
TEMP[0]=TEMP_Word>>8;
TEMP[1]=TEMP_Word&0xFF;
Write_DS2782_Shadow_RAM(ACMSB,TEMP[0]); //老化容量 AC
Write_DS2782_Shadow_RAM(ACLSB,TEMP[1]); //老化容量 AC
/*计算 充电电压VCHG AC 单位 为19.52mV */
TEMP[0]=(int)(Charge_Voltage/19.52);
Write_DS2782_Shadow_RAM(VCHG,TEMP[0]); //充电电压VCHG
/*写入AS，100% */
TEMP[0]= 0x80;
Write_DS2782_Shadow_RAM(AS,TEMP[0]); //AS
/*计算 最小充电电流 IMIN 单位 为50μV */
TEMP[0]=(int)(Minimum_Charge_Current*RSNSP_mOhm/50);
Write_DS2782_Shadow_RAM(IMIN,TEMP[0]); //最小充电电流 IMIN
/*计算 VAE 0x66 有效空电压 单位 为19.52mV */
TEMP[0]=(int)(Empty_Voltage/19.52);
Write_DS2782_Shadow_RAM(VAE,TEMP[0]); // VAE 0x66 有效空电压
/*计算 IAE 0x67 有效空电流 单位 为200μV */
TEMP[0]=(int)(Empty_Current*RSNSP_mOhm/200);
Write_DS2782_Shadow_RAM(IAE,TEMP[0]); // IAE 0x67 有效空电流
/*计算 RSNSP 0x69 采样电阻 单位 电导形式存储 */
TEMP[0]=(int)(1000/RSNSP_mOhm);
Write_DS2782_Shadow_RAM(RSNSP,TEMP[0]); // RSNSP 0x69 采样电阻
TEMP_Word=(uint16_t)Capacity*RSNSP_mOhm; //计算 +40°C温度时的满电量值 6.25μVh
TEMP_Word=(int)(TEMP_Word/6.25);
TEMP[0]=TEMP_Word>>8;
TEMP[1]=TEMP_Word&0xFF;
/*
Write_DS2782_Shadow_RAM(FULLSMSB,TEMP[0]); //+40°C温度时的满电量值 FULLS
Write_DS2782_Shadow_RAM(FULLSLSB,TEMP[1]); //+40°C温度时的满电量值 FULLS
Write_DS2782_Shadow_RAM(0x68, 0x06);
Write_DS2782_Shadow_RAM(FULL3040,0x0E); // 满电量斜率
Write_DS2782_Shadow_RAM(FULL2030,0x11); // 满电量斜率
Write_DS2782_Shadow_RAM(FULL1020,0x31); // 满电量斜率
Write_DS2782_Shadow_RAM(FULL0010,0x36); // 满电量斜率
Write_DS2782_Shadow_RAM(AE3040,0x05); // 空电量斜率
Write_DS2782_Shadow_RAM(AE2030,0x09); // 空电量斜率
Write_DS2782_Shadow_RAM(AE1020,0x12); // 空电量斜率
Write_DS2782_Shadow_RAM(AE0010,0x25); // 空电量斜率
Write_DS2782_Shadow_RAM(SE3040,0x03); // 待机空电量斜率
Write_DS2782_Shadow_RAM(SE2030,0x03); // 待机空电量斜率
Write_DS2782_Shadow_RAM(SE1020,0x05); // 待机空电量斜率
Write_DS2782_Shadow_RAM(SE0010,0x15); // 待机空电量斜率
Write_DS2782_Shadow_RAM(RSGAINMSB, 0x04);
Write_DS2782_Shadow_RAM(RSGAINLSB, 0x08);
*/
Copy_Data_For_Shadow_RAM_To_EEPROM(Copy_data_back_1);
printf("\r\n 库仑计设置成功！！\r\n");
}
